Print preview VALIDITY EXPIRED personal data approved: 2018. X. 17. Publications |
2017
from data base, 2018. X. 17. |
Rakovics V, Nádas J, Réti I, Dücso C, Battistig G: Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures, JOURNAL OF CRYSTAL GROWTH 468: pp. 572-575. type of document: Journal paper/Article language: English URL |
2017
from data base, 2018. X. 17. |
József Nádas, Vilmos Rakovics: High Intensity Broad Spectrum LEDs in the Near Infrared Range, MATERIALS SCIENCE FORUM 885: pp. 141-146. type of document: Journal paper/Article language: English DOI |
2016
from data base, 2018. X. 17. |
J Nadas, V Rakovics: Bandwidth widening of semiconductors with luminescent layer, In: Szerk.: Dariusz Sawicki, Szerk.: Piotr Pracki Proceedings of the VI. IEEE Lighting Conference of the Visegrad Countries LUMEN V4. New York: IEEE, 2016. Paper 7745519. 4 p. type of document: Part of book/Proceedings Paper language: English DOI |
2014
from data base, 2018. X. 17. |
Réti István, Ürmös Antal, Nádas József, Rakovics Vilmos: Nanostruktúrás LED-ek, ELEKTROTECHNIKA 107: (11) pp. 19-23. type of document: Journal paper/Article language: Hungarian URL |
2014
from data base, 2018. X. 17. |
V Rakovics, A N Imenkov, V V Sherstnev, O Yu Serebrennikova, N D Il’inskaya, Yu P Yakovlev: High-power LEDs based on InGaAsP/InP heterostructures, SEMICONDUCTORS 48: (12) pp. 1653-1656. type of document: Journal paper/Article language: English DOI |
2009
from data base, 2018. X. 17. |
Oroszi L, Der A, Kirei H, Rakovics V, Ormos P: Manipulation of microfluidic flow pattern by optically controlled electroosmosis, MICROFLUIDICS AND NANOFLUIDICS 6: (4) pp. 565-569. type of document: Journal paper/Article number of independent citations: 6 language: English Full text |
2006
from data base, 2018. X. 17. |
Oroszi L, Der A, Kirei H, Ormos P, Rakovics V: Control of electro-osmostic flow by light, APPLIED PHYSICS LETTERS 89: (26) p. 263508. type of document: Journal paper/Article number of independent citations: 17 language: English DOI |
2003
from data base, 2018. X. 17. |
Horváth Zs J, Rakovics V, Szentpáli B, Püspöki S, Zdánsky K: InP Schottky junctions for zero bias detector diodes, VACUUM 71: (1-2) pp. 113-116. type of document: Journal paper/Article number of independent citations: 43 language: English DOI |
2000
from data base, 2018. X. 17. |
Gergely G, Menyhard M, Gurban S, Benedek Z, Daroczi C, Rakovics V, Toth J, Varga D, Krawczyk M, Jablonski A: Experimental determination of the inelastic mean free path of electrons in gap and inas, SURFACE AND INTERFACE ANALYSIS 30: (1) pp. 195-198. type of document: Journal paper/Article number of independent citations: 10 language: English DOI |
1985
from data base, 2018. X. 17. |
LENDVAY E, GOROG T, RAKOVICS V: LPE GROWTH OF GAAS-GAALAS SUPERLATTICES, JOURNAL OF CRYSTAL GROWTH 72: (3) pp. 616-620. type of document: Journal paper/Article number of independent citations: 5 language: English DOI |
| Number of independent citations to these publications: | 81 |
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