Zsolt József Horváth - ODT Personal data sheet


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Personal data sheet

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VALIDITY EXPIRED
personal data approved: 2019. X. 29.

Personal data

name	Zsolt József Horváth
name of institution	Budapest University of Technology and Economics Universitas Budensis Doctoral Council of the University (member with consultation rigths)
doctoral school	BME Doctoral School of Physics (Academic staff member Az oktató a doktori iskola doktoranduszai számára oktat tantárgyat, és/vagy a doktori iskola megszavazta, hogy doktoranduszok számára kutatási témát írjon ki. ) OE Doctoral School of Materials Science and Technologies (Core member emeritus) Council of the Doctoral School (discipline) Doctoral Council OE Doctoral School of Applied Informatics and Applied Mathematics (discipline) Habilitation Comittee (discipline) Doctoral Council OE Doctoral School on Safety and Security Sciences (discipline) Habilitation Comittee (discipline) Doctoral Council
the share of work in the different doctoral schools.	BME Doctoral School of Physics 17% OE Doctoral School of Materials Science and Technologies 82% OE DS-ATDI-OE Council of the Doctoral School 1%
accreditation statement submitted to:	Universitas Budensis

Contact details
E-mail address	horvzsjmfa.kfki.hu
phone number	+36 1 666-5145
	own web page

Academic title
scientific degree, title	Ph.D.
year degree was obtained	1994
discipline to which degree belongs	electrical engineering
institution granting the degree	Budapesti Műszaki Egyetem (to be translated)
scientific degree, title	CSc
year degree was obtained	1994
discipline to which degree belongs	electrical engineering
institution granting the degree	HAS
scientific degree, title	DSc
year degree was obtained	2009
discipline to which degree belongs	electrical engineering
institution granting the degree	HAS

Employment
1998 -	Universitas Budensis professor emeritus

Thesis topic supervisor

number of doctoral students supervised until now

number of students who fulfilled course requirements

students who obtained their degrees:

Péter Basa

PhD

2009

DSP1-BME

Thesis topic proposals

Research
research area	Physics and technology of semiconductor materials, structures, and devices.
research field in which current research is conducted	electrical engineering material sciences

Publications

2014

L Dobos, B Pécz, L Tóth, Zs J Horváth, Z E Horváth, A L Tóth, M -A Poisson: Annealed Ti/Cr/Al contacts on n-GaN, VACUUM 100: pp. 46-49.
type of document: Journal paper/Article
number of independent citations: 5
language: English
DOI

2014

Horváth Zs J: Threshold//Flat-Band Voltage Hysteresis of Non-Volatile Semiconductor Memory Devices, In: Szerk.: Jose Carlos Dias Hysteresis: Types, Applications and Behavior Patterns in Complex Systems. New York: Nova Science Publishers, 2014. pp. 187-214. (Materials Science and Technologies)
type of document: Part of book/Könyvfejezet (to be translated)
language: English

2013

Horváth ZsJ, Basa P, Molnár KZ, Jászi T, Pap AE, Molnár Gy, Dobos L, Tóth L, Pécz B: Charging Behaviour of Metal-Nitride-Oxide-Semiconductor Memory Structures with Embedded Si or Ge Nanocrystals, NANOSCIENCE AND NANOTECHNOLOGY LETTERS 5: (4) pp. 513-517.
type of document: Journal paper/Article
number of independent citations: 1
language: English
URL

2013

Horváth ZsJ, Basa P, Jászi T, Molnár KZ, Pap AE, Molnár Gy: Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals, APPLIED SURFACE SCIENCE 269: pp. 23-28.
type of document: Journal paper/Article
number of independent citations: 2
language: English
URL

2013

Horváth ZsJ, Basa P, Molnár KZ, Molnár Gy, Jászi T, Pap AE: Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures., PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 51: pp. 104-110.
type of document: Journal paper/Article
number of independent citations: 6
language: English
URL

2005

Ayyildiz E, Cetin H, Horváth ZJ: Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes, APPLIED SURFACE SCIENCE 252: (4) pp. 1153-1158.
type of document: Journal paper/Article
number of independent citations: 44
language: English
DOI

2004

Osvald J, Horvath ZJ: Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer, APPLIED SURFACE SCIENCE 234: (1-4) pp. 349-354.
type of document: Journal paper/Article
number of independent citations: 84
language: English
DOI

1996

Horváth ZJ: Comment on "Analysis of I-V measurements on CrSi2-Si Schottky structures in a wide temperature range", SOLID-STATE ELECTRONICS 39: (1) pp. 176-178.
type of document: Journal paper/Article
number of independent citations: 115
language: English
DOI

1995

HORVATH ZJ: LATERAL DISTRIBUTION OF SCHOTTKY-BARRIER HEIGHT - A THEORETICAL APPROACH, VACUUM 46: (8-10) pp. 963-966.
type of document: Journal paper/Article
number of independent citations: 25
language: English
DOI

1988

HORVATH ZJ: DOMINATION OF THE THERMIONIC-FIELD EMISSION IN THE REVERSE IV CHARACTERISTICS OF N-TYPE GAAS SCHOTTKY CONTACTS, JOURNAL OF APPLIED PHYSICS 64: (12) pp. 6780-6784.
type of document: Journal paper/Article
number of independent citations: 23
language: English

Number of independent citations to these publications:

305

Scientometric data

list of publications and citations

number of scientific publications that meet accreditation criteria:

295

number of scientific publications:

280

monographs and professional books:

monographs/books in which chapters/sections were contributed:

scientific publications published abroad that meet the accreditation criteria:

237

publications not in Hungarian, published in Hungary, meeting the accreditation criteria:

number of independent citations to scientific publications and creative works:

1194

2024. IV. 17.
ODT ülés
Az ODT következő ülésére 2024. június 14-én, pénteken 10.00 órakor kerül sor a Semmelweis Egyetem Szenátusi termében (Bp. Üllői út 26. I. emelet).