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| Personal data sheet |
 Print previewVALIDITY EXPIRED
personal data approved: 2021. V. 20. | Publications |
2020
 from data base, 2021. V. 20. |
Károlyházy G., Beke D., Zalka D., Lenk S., Krafcsik O., Kamarás K., Gali Á.: Novel method for electroless etching of 6H–SiC, NANOMATERIALS 10: (3) 538
type of document: Journal paper/Article
number of independent citations: 1
language: English
URL |
2018
from data base, 2021. V. 20. |
Beke D., Fučíková A., Jánosi T.Z., Károlyházy G., Somogyi B, Lenk S., Krafcsik O., Czigány Z., Erostyák J., Kamarás K., Valenta J., Gali A.: Direct Observation of Transition from Solid-State to Molecular-Like Optical Properties in Ultrasmall Silicon Carbide Nanoparticles, JOURNAL OF PHYSICAL CHEMISTRY C 122: (46) pp. 26713-26721.
type of document: Journal paper/Article
number of independent citations: 2
language: English
URL |
2017
from data base, 2021. V. 20. |
Csanády Ágnes, Gábor János, Jenei Péter, Gubicza Jenő, János Szabó Péter, Fábián Réka, Radnóczi György, Lajos Tóth Attila, Langer Gábor, H Krafcsik Olga, Verő Balázs: Secrets of Abraham Ganz’s Train Wheels Enlightened by Materials Science Methods, MATERIALS SCIENCE FORUM 885: pp. 55-60.
type of document: Journal paper/Konferenciaközlemény
language: English
URL |
2013
from data base, 2021. V. 20. |
Béla Sebők, Gábor Kiss, Gábor Dobos, Ferenc Réti, Tamás Majoros, Olga H Krafcsik: Novel instrument and method for the investigation of small permeation fluxes of gases through different membranes, MEASUREMENT 46: (9) pp. 3516-3524.
type of document: Journal paper/Article
number of independent citations: 1
language: English
URL |
2004
from data base, 2021. V. 20. |
Zs J Horváth, L Dózsa, O H Krafcsik, T Mohácsy, Gy Vida, P Deák: Electrical Behaviour of Al/SiO2/Si Structures with SiC Nanocrystals, APPLIED SURFACE SCIENCE 234: (1-4) pp. 67-71.
type of document: Journal paper/Article
number of independent citations: 17
language: English
URL |
2002
from data base, 2021. V. 20. |
Krafcsik OH, Vida Gy, Josepovits K, Deak P, Radnoczi Gy Z, Pecz B, Barsony I: Void-free epitaxial growth of cubic SiC crystallites during CO heat treatment of oxidized silicon, MATERIALS SCIENCE FORUM 389-393: (1) pp. 359-362.
type of document: Journal paper/Article
number of independent citations: 3
language: English
URL |
2002
from data base, 2021. V. 20. |
Krafcsik OH, Josepovits KV, Toth L, Pecz B, Deak P: Growth of Epitaxial Beta-sic at The Sio2/si Interface as a Result of Annealing in CO, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 149: (4) pp. G297-G299.
type of document: Journal paper/Article
number of independent citations: 9
language: English
URL |
2001
from data base, 2021. V. 20. |
Krafcsik O, Vida G, Pócsik I, Josepovits KV, Deak P: Carbon diffusion through SiO2 from a hydrogenated amorphous carbon layer and accumulation at the SiO2/Si interface., JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 40: (4A) pp. 2197-2200.
type of document: Journal paper/Article
number of independent citations: 8
language: English
URL |
2001
from data base, 2021. V. 20. |
Krafcsik OH, Josepovits KV, Deak P: Dissolution mechanism of the carbon islands at the SiO2-SiC interface, MATERIALS SCIENCE FORUM 353-356: pp. 659-662.
type of document: Journal paper/Article
number of independent citations: 2
language: English
URL |
1999
from data base, 2021. V. 20. |
Kiss G, Paulus H, Krafcsik O, Reti F, Muller KH, Giber J: Effect of surface oxidation on the solution of hydrogen in vanadium, FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY 365: (1-3) pp. 203-207.
type of document: Journal paper/Article
number of independent citations: 9
language: English
URL |
| | Number of independent citations to these publications: | 52 |
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