Ferenc Riesz - ODT Personal data sheet


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Personal data sheet

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personal data approved: 2017. XII. 24.

Personal data

name	Ferenc Riesz
year of birth	1965
name of institution	Budapest University of Technology and Economics
doctoral school	BME Doctoral School of Physics (Academic staff member Az oktató a doktori iskola doktoranduszai számára oktat tantárgyat, és/vagy a doktori iskola megszavazta, hogy doktoranduszok számára kutatási témát írjon ki. )

Contact details
E-mail address	rieszmfa.kfki.hu
phone number	+36 1 392-2222/3156
	own web page

Academic title
scientific degree, title	Ph.D.
year degree was obtained	1994
discipline to which degree belongs	electrical engineering
institution granting the degree	MTA Tudományos Minősítő Bizottság (to be translated)
scientific degree, title	CSc
year degree was obtained	1994
discipline to which degree belongs
institution granting the degree	HAS

Employment
2015 -	MTA Energiatudományi Kutatóközpont, Műszaki Fizikai és Anyagtudományi Intézet (research institute, not university) other (not specified) (tudományos főmunkatárs)

Thesis topic supervisor

number of doctoral students supervised until now

number of students who fulfilled course requirements

students who obtained their degrees:

István Endre Lukács

PhD

2006

DSP1-BME

Thesis topic proposals

Research
research area	physics and technology of semiconductors, optical metrology of flat surfaces, Makyoh topography
research field in which current research is conducted	electrical engineering physics

Publications

2016

Bosi M, Attolini G, Negri M, Ferrari C, Buffagni E, Frigeri C, Calicchio M, Pecz B, Riesz F, Cora I, Osvath Z, Jiang L, Borionetti G: Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition, CRYSTENGCOMM 18: (15) pp. 2770-2779.
type of document: Journal paper/Article
number of independent citations: 1
language: English
URL

2014

Ryć L, Barna A, Calcagno L, Földes IB, Parys P, Riesz F, Rosińsk M, Szatmári S, Torrisi L: Measurement of ion emission from plasmas obtained with a 600 fs KrF laser, PHYSICA SCRIPTA 2014: (T161) Paper 014032. 5 p.
type of document: Journal paper/Article
language: English
URL

2014

Biró F, Dücso C, Hajnal Z, Riesz F, Pap AE, Bársony I: Thermo-mechanical design and characterization of low dissipation micro-hotplates operated above 500 °C, MICROELECTRONICS JOURNAL 45: (12) pp. 1822-1828.
type of document: Journal paper/Article
number of independent citations: 1
language: English
DOI

2014

I Bársony, Cs Dücső, P Fürjes, F Riesz, Z Hajnal, G Battistig: Membrane Platforms for Sensors, PROCEDIA ENGINEERING 87: pp. 871-878.
type of document: Journal paper/Review paper
language: English
DOI

2013

Riesz F: Non-linearity and related features of Makyoh (magic-mirror) imaging, JOURNAL OF OPTICS 15: (7) Paper 075709. 14 p.
type of document: Journal paper/Article
language: English
URL

2000

Riesz F: Geometrical optical model of the image formation in Makyoh (magic-mirror) topography, JOURNAL OF PHYSICS D-APPLIED PHYSICS 33: (23) pp. 3033-3040.
type of document: Journal paper/Article
number of independent citations: 21
language: English

1996

Riesz F: Crystallographic tilting in high-misfit (100) semiconductor heteroepitaxial systems, JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A-VACUUM SURFACES AND FILMS 14: (2) pp. 425-430.
type of document: Journal paper/Article
number of independent citations: 37
language: English

1996

Riesz F: Crystallographic tilting in lattice-mismatched heteroepitaxy: A Dodson-Tsao relaxation approach, JOURNAL OF APPLIED PHYSICS 79: (8) pp. 4111-4117.
type of document: Journal paper/Article
number of independent citations: 20
language: English

1993

Riesz F: The role of surface steps in the asymmetric surface dislocation nucleation in vicinal heterostructures with compressive and tensile stresses, SURFACE SCIENCE 292: (3) pp. L817-L820.
type of document: Journal paper/Article
number of independent citations: 8
language: English

1991

Riesz F, Lischka K, Rakennus K, Hakkarainen T, Pesek A: Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions, JOURNAL OF CRYSTAL GROWTH 114: (1-2) pp. 127-132.
type of document: Journal paper/Article
number of independent citations: 18
language: English

Number of independent citations to these publications:

106

Scientometric data

Saját közlemény- és idézőlista

list of publications and citations

number of scientific publications that meet accreditation criteria:

149

number of scientific publications:

165

monographs and professional books:

monographs/books in which chapters/sections were contributed:

number of independent citations to scientific publications and creative works:

394

further relevant information regarding accreditation (in Hungarian)
Nemzetközi szabadalom: Lukács IE (23%), Makai JP (24%), Pfitzner L (5%), Riesz F (34%), Szentpáli B (14%) Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces European Patent EP 1 434 981 B1, July 5, 2006 US Patent 7,133,140 B2, November 7, 2006 (to be translated)