 |
|
| Personal data sheet |
 Print previewVALIDITY EXPIRED
personal data approved: 2021. I. 07. | Publications |
2020
 from data base, 2020. IV. 05. |
Sánta B, Molnár D, Haiber P, Gubicza A, Szilágyi E, Zolnai Zs, Halbritter A, Csontos M: Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions, BEILSTEIN JOURNAL OF NANOTECHNOLOGY 11: pp. 92-100.
type of document: Journal paper/Article
language: English
URL |
2020
from data base, 2020. IV. 05. |
Török Tímea Nóra, Csontos Miklós, Makk Péter, Halbritter András: Breaking the Quantum PIN Code of Atomic Synapses, NANO LETTERS 20: (2) pp. 1192-1200.
type of document: Journal paper/Article
language: English
URL |
2019
from data base, 2020. IV. 05. |
Sánta Botond, Balogh Zoltán, Gubicza Agnes, Pósa László, Krisztián Dávid, Mihály György, Csontos Miklos, Halbritter Andras: Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions, NANOSCALE 11: (11) pp. 4719-4725.
type of document: Journal paper/Article
number of independent citations: 1
language: English
URL |
2018
from data base, 2020. IV. 05. |
Molnár Dániel, Török Tímea Nóra, Sánta Botond, Gubicza Agnes, Magyarkuti András, Hauert Roland, Kiss Gábor, Halbritter András, Csontos Miklós: In situ impedance matching in Nb/Nb 2 O 5 /PtIr memristive nanojunctions for ultra-fast neuromorphic operation, NANOSCALE 10: (41) pp. 19290-19296.
type of document: Journal paper/Article
language: English
URL |
2017
from data base, 2020. IV. 05. |
Pósa László, El Abbassi Maria, Makk Péter, Sánta Botond, Nef Cornelia, Csontos Miklós, Calame Michel, Halbritter András: Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene–SiOx-Graphene Memristors, NANO LETTERS 17: (11) pp. 6783-6789.
type of document: Journal paper/Article
number of independent citations: 6
language: English
URL |
2016
from data base, 2020. IV. 05. |
A Gubicza, D Zs Manrique, L Pósa, C J Lambert, G Mihály, M Csontos, A Halbritter: Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design, SCIENTIFIC REPORTS 6: 30775
type of document: Journal paper/Article
number of independent citations: 12
language: English
URL |
2015
from data base, 2020. IV. 05. |
Agnes Gubicza, Miklós Csontos, András Halbritter, György Mihály: Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices, NANOSCALE 7: (10) pp. 4394-4399.
type of document: Journal paper/Article
number of independent citations: 17
language: English
URL |
2015
from data base, 2020. IV. 05. |
Agnes Gubicza, Miklós Csontos, András Halbritter, György Mihály: Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition, NANOSCALE 7: pp. 11248-11254.
type of document: Journal paper/Article
number of independent citations: 5
language: English
URL |
2014
from data base, 2020. IV. 05. |
Geresdi A, Csontos M, Gubicza Á, Halbritter A, Mihály G: Fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices, NANOSCALE 6: (5) pp. 2613-2617.
type of document: Journal paper/Article
number of independent citations: 10
language: English
URL |
2005
from data base, 2020. IV. 05. |
Csontos M, Mihaly G, Janko B, Wojtowicz T, Liu X, Furdyna JK: Pressure-induced Ferromagnetism in (in,mn)sb Dilute Magnetic Semiconductor, NATURE MATERIALS 4: (6) pp. 447-449.
type of document: Journal paper/Article
number of independent citations: 66
language: English
URL |
| | Number of independent citations to these publications: | 117 |
|
|
|
|
|
Login
mail.bme.hu
