VALIDITY EXPIRED personal data approved: 2019. XI. 21. Publications |
2006
from data base, 2018. II. 05. |
David L, Dobos L, Kovacs B, Mojzes I, Pecz B: Fractal Character of in Situ Heat Treated Metal-compound Semiconductor Contacts, JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 17: (4) pp. 321-324. type of document: Journal paper/Article number of independent citations: 3 language: English DOI |
2002
from data base, 2018. II. 05. |
Kocsis Z, Hopp B, Mudra I, Ripka G, Kovacs B, Mojzes I: Conductivity Modification of Silver Salt-filled Polyimide Film by Pulsed Krf Laser, JOURNAL OF ELECTRONIC MATERIALS 31: (4) pp. 239-243. type of document: Journal paper/Article number of independent citations: 1 language: English DOI |
1998
from data base, 2018. II. 05. |
David L, Kovacs B, Mojzes I, Pecz B, Labar J: Electrical And Microstructure Analysis of Ni/ge/n-gaas Interface, THIN SOLID FILMS 323: (1-2) pp. 212-216. type of document: Journal paper/Article number of independent citations: 1 language: English DOI |
1998
from data base, 2018. II. 05. |
Mojzes I, Kovacs B, Schuszter M, Kun I, Mate L, Dobos L, David L: Fractal behaviour of the surface of in situ heat treated metal-InP contacts, THIN SOLID FILMS 317: (1-2) pp. 69-71. type of document: Journal paper/Article number of independent citations: 4 language: English DOI |
1996
from data base, 2018. II. 05. |
L Dávid, B Kovács, B Pécz, I Mojzes, L Dobos, Gy Vincze: AlNiGe as a new dedicated material for contacts to n-GaAs, PHYSICA A - STATISTICAL MECHANICS AND ITS APPLICATIONS 2: pp. 55-61. type of document: Journal paper/Article number of independent citations: 1 language: English
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1995
from data base, 2018. II. 05. |
KOVACS B, MOLNAR G, DOZSA L, PETO G, ANDRASI M, KARANYI J, HORVATH ZJ: CURRENT-VOLTAGE ANOMALIES ON POLYCRYSTALLINE GDSI2/P-SI SCHOTTKY JUNCTIONS DUE TO GRAIN-BOUNDARIES, VACUUM 46: (8-10) pp. 983-985. type of document: Journal paper/Article number of independent citations: 2 language: English DOI |
1994
from data base, 2018. II. 05. |
Kourkoutas CD, Kovács B, Euthymiou PC, Szentpáli B, Somogyi K, Giakoumakis GE: A study of the profile of the E3 electron trap in GaAs, SOLID STATE COMMUNICATIONS 89: (1) pp. 45-49. type of document: Journal paper/Article number of independent citations: 1 language: English DOI |
1993
from data base, 2018. II. 05. |
Horváth ZJ, Molnar G, Kovács B, Pető G, Andrási M, Szentpáli B: Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schotty junctions, JOURNAL OF CRYSTAL GROWTH 126: (1) pp. 163-167. type of document: Journal paper/Article number of independent citations: 9 language: English DOI |
1988
from data base, 2018. II. 05. |
Mojzes I, Veresegyhazy R, Kovacs B, Pecz B, Malina V: Metal-film Barriers Against The Evaporation of Volatile Components During The Heat-treatment of Metal-compound Semiconductor Contacts, THIN SOLID FILMS 164: pp. 1-4. type of document: Journal paper/Article number of independent citations: 8 language: English DOI |
1986
from data base, 2018. II. 05. |
Jaroli E, Khanh NQ, Mezey G, Zsoldos E, Kovacs B, Mojzes I, Lohner T, Kotai E, Manuaba A, Fried M, Gyulai J: INTERMETALLIC COMPOUND FORMATION OF GE-NI AND GE-AL-NI SYSTEMS BY FURNACE ANNEALING AND ION-BEAM INTERMIXING, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 15: pp. 703-706. type of document: Journal paper/Article number of independent citations: 2 language: English DOI |
| Number of independent citations to these publications: | 32 |
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